Component library
6 parts indexed · synthetic seed data
DLX-GN65R050
DataLux Semiconductor
650 V enhancement-mode GaN HEMT in surface-mount GaNPX, optimized for high-frequency LLC and totem-pole PFC.
GaN HEMTGaNPX-4active
- Vds
- 650 V
- Id
- 30 A
- Rds(on)
- 50 mΩ
- Qg
- 5.8 nC
- Vgs(th)
- 1.7 V
- Tier
- B
DLX-SC12R025
DataLux Semiconductor
1200 V SiC MOSFET in 4-pin Kelvin-source TO-247, optimized for fast switching in EV traction inverters.
SiC MOSFETTO-247-4active
- Vds
- 1.2 kV
- Id
- 65 A
- Rds(on)
- 25 mΩ
- Qg
- 62 nC
- Vgs(th)
- 2.4 V
- Tier
- A
DLX-SJ60R070
DataLux Semiconductor
600 V super-junction Si MOSFET in TO-247-3, optimized for hard-switched PFC.
Si MOSFETTO-247-3active
- Vds
- 600 V
- Id
- 48 A
- Rds(on)
- 70 mΩ
- Qg
- 95 nC
- Vgs(th)
- 3.5 V
- Tier
- A
FF4MR12W2M1HP_B11
Infineon Technologies AG
1200 V, 200 A / 400 A EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC / TIM
CoolSiC Trench MOSFETEasyDUAL moduleactive
- Vds
- 1.2 kV
- Id
- 200 A
- Rds(on)
- —
- Qg
- —
- Vgs(th)
- —
- Tier
- A
G3F05MT12GB2
Navitas
1200V 4.6mΩ Half-Bridge SiC Module
SiCSiCPAK Gactive
- Vds
- 1.2 kV
- Id
- 216 A
- Rds(on)
- 4.6 mΩ
- Qg
- —
- Vgs(th)
- —
- Tier
- B
NXH003P120M3F2PTHG
onsemi
1200 V, 3 mΩ EliteSiC M3 SiC MOSFET 2-PACK half-bridge power module with HPS DBC, NTC thermistor, pre-applied TIM and press-fit pins. Targets solar inverters, UPS, EV chargers and industrial drives.
SiC Module (M3 MOSFET)F2 / PIM36 (Case 180BY)active
- Vds
- 1.2 kV
- Id
- 350 A
- Rds(on)
- 3.19 mΩ
- Qg
- 1.2 knC
- Vgs(th)
- 2.4 V
- Tier
- A