DLX-GN65R050
tier BGaN HEMTGaNPX-4650 V enhancement-mode GaN HEMT in surface-mount GaNPX, optimized for high-frequency LLC and totem-pole PFC.
DataLux Semiconductor · datasheet rev Rev 2.1 · 17 pages
- Vds max
- 650 V
- Id max
- 30 A
- Rds(on)
- 50 mΩ
- Qg
- 5.8 nC
Summary
Top-level extracted fields
Technology
GaN HEMT
Package
GaNPX-4
Vds max
650 V
Id max
30 A
Rds(on) typ
50 mΩ
Qg
5.8 nC
Vgs(th)
1.7 V
Datasheet
dlx-gn65r050.pdf
Pages
17
Quality at a glance
Tier B · overall 87%
Overview95%
Absolute Max97%
Electrical92%
Thermal78%
Capacitance / Charge90%
Switching70%
Safe Operating Area78%
Package95%
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