G3F05MT12GB2
tier BTrench-Assisted PlanarSiCPAK™ G1200V 4.6mΩ Half-Bridge SiC Module
Navitas Semiconductor · datasheet rev 25/Mar (Preliminary) · 12 pages
- Vds max
- 1.2 kV
- Id max
- 216 A
- Rds(on)
- 4.6 mΩ
- Qg
- —
Summary
Top-level extracted fields
Technology
Trench-Assisted Planar
Package
SiCPAK™ G
Vds max
1.2 kV
Id max
216 A
Rds(on) typ
4.6 mΩ
Qg
—
Vgs(th)
—
Datasheet
G3F05MT12GB2-T.pdf
Pages
12
Quality at a glance
Tier B · overall 88%
Overview90%
Absolute Max95%
Electrical90%
Thermal85%
Capacitance / Charge85%
Switching85%
Safe Operating Area80%
Package90%
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